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| IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 55 6.5 80 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0607 3N0607 3N0607 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=40 A Value 80 74 320 455 80 20 135 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.1 page 1 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=80 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=51 A V GS=10 V, I D=51 A, SMD version 55 2.1 3.0 4.0 1 A V 1.1 62 62 40 K/W Values typ. max. Unit - 1 1 5.8 5.5 100 100 6.8 6.5 nA m Rev. 1.1 page 2 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 1) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz - 7768 1182 1128 30 41 34 33 - pF ns Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V - 56 25 113 6.6 170 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 - 0.9 55 70 80 320 1.3 - A V ns nC Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 105 A at 25C. For detailed information see Application Note ANPS071E 2) 3) 4) Defined by design. Not subject to production test. Qualified at -5V and +20V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 160 140 100 80 120 100 60 P tot [W] 80 60 40 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 20 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 s 10 s 100 100 1 ms 100 s 0.5 Z thJC [K/W] I D [A] 0.1 10 -1 0.05 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.1 page 4 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 200 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 20 5.5 V 180 8V 18 16 14 6V 160 140 7V R DS(on) [m] 120 I D [A] 12 10 8 8V 100 80 60 7V 6V 40 5.5 V 6 4 10 V 20 0 0 2 5V 4.5 V 2 6 8 0 20 40 60 80 100 120 4 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 180 160 140 120 25 C -55 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 11 9 100 80 60 175 C R DS(on) [m] 8 I D [A] 7 5 40 20 0 0 2 4 6 3 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.1 page 5 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 10000 Ciss 3.5 Coss 3 800A Crss V GS(th) [V] 80A C [pF] 2.5 1000 2 1.5 1 -60 -20 20 60 100 140 180 100 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 25C 150C 100C 102 I AV [A] 101 175 C 25 C I F [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.1 page 6 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 13 Typical avalanche energy E AS = f(T j) parameter: I D 1000 900 800 700 20 A 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 66 64 62 60 V BR(DSS) [V] 600 58 56 54 52 E AS [mJ] 500 40 A 400 300 80 A 200 100 0 0 50 100 150 200 50 48 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 11 V 44 V 16 Gate charge waveforms VG Qg 10 8 V GS [V] 6 4 2 Q Qg 0 50 100 150 200 0 Qg Q gate [nC] Rev. 1.1 page 7 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-11-07 IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 Revision History Version Date Changes Data Sheet 2.1 15.12.2006 Removal of ordering code Data Sheet 2.1 15.12.2006 Update of Infineon Logo Implementation of avalanche 15.12.2006 current single pulse Data Sheet 2.1 Data Sheet 2.1 15.12.2006 Removal of ESD class Data Sheet 2.1 15.12.2006 Update of Infineon address Removal of foot note 3, avalanche 15.12.2006 diagrams Data Sheet 2.1 Data Sheet 2.1 15.12.2006 Update of trr and Qrr Data Sheet 2.1 15.12.2006 Update of disclaimer Implementation of RoHS and AEC 15.12.2006 logo, update of feature list Data Sheet 2.1 Data Sheet 1.1 07.11.2007 Update of data sheet layout Data Sheet 1.1 07.11.2007 Adaptation of Ias implementation of footnote 2 for 07.11.2007 Eas specification removal of Vdg specification from 07.11.2007 data sheet Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 page 9 2007-11-07 |
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